to-251 plastic-encapsulate d transistors c 2611 transistor (npn) features power dissipation p cm: 1 w (tamb=25 ) collector current i cm: 0.2 a collector-base voltage v (br)cbo : 600 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= 100a, i e =0 600 v collector-emitter breakdown voltage v(br) ceo i c = 1ma , i b =0 400 v emitter-base breakdown voltage v(br) ebo i e = 100a, i c =0 7 v collector cut-off current i cbo v cb = 600v, i e =0 100 a collector cut-off current i ceo v ce = 400v, i b =0 200 a emitter cut-off current i ebo v eb = 7v, i c =0 100 a h fe(1) v ce = 20v, i c = 20ma 10 40 dc current gain h fe(2) v ce = 10v, i c = 0.25 ma 5 collector-emitter saturation voltage v ce (sat) i c = 50ma, i b = 10 ma 0.5 v base-emitter saturation voltage v be (sat) i c = 50 ma, i b = 10ma 1.2 v transition frequency f t v ce = 20 v, i c =20ma f = 1mhz 8 mhz fall time t f 0.3 s storage time t s i c =50ma, i b1 =-i b2 =5ma, v cc =45v 1.5 s classification of h fe(1) rank range 10-15 15-20 20-25 25-30 30-35 35-40 1 2 3 to-251 1. emitter 2. collector 3. base transys electronics li m ite d
|
